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PRELIMINARY
RT3U22M
Composite Transistor For high speed switching Silicon N-channel + P-channel MOSFET
DESCRIPTION
RT3U22M is a composite transistor built with
OUTLINE DRAWING
2.1 1.25 0.65 0.2
Unitmm
INK0002AX and INJ0002AX chips in SC-88 package.
FEATURE
Input impedance is high, and not necessary to consider a drive electric current. Vth is low, and drive by low voltage is possible. Vth=0.61.2V Low on Resistance. Ron= 1.1 / 3(Tr1/Tr2) TYP High speed switching. Small package for easy mounting.
2.0
APPLICATION
high speed switching , Analog switching
*P-channel MOSFET Tr2's minus sign is omitted 00.1 0.65 0.13
Tr.1
0.9
0.65
TERMINAL CONNECTOR SOURCE1 GATE1 DRAIN2 SOURCE2 GATE2 :DRAIN1 JEITASC-88
Tr.2
MAXIMUM RATING (Ta=25)
SYMBOL VDSS VGSS ID PD Tch Tstg PARAMETER RATING 30 UNIT V V mA mW
6 5 4
MARKING
Drain-source voltage Gate-source voltage Drain current Total power dissipationTa=25 Channel temperature Range of Storage temperature
8 200
150 125 -55125
. .
2 3
ISAHAYA ELECTRONICS CORPORATION
PRELIMINARY
RT3U22M
Composite Transistor For high speed switching Silicon N-channel + P-channel MOSFET
ELECTRICAL CHARACTERISTICS (Ta=25)
Symbol V(BR)DSS IGSS IDSS Vth Parameter Test conditions Limits Min Typ Max Unit
Drain-source breakdown voltage Gate-source leak current Zero gate voltage drain current Gate threshold voltage Forward transfer admittance Static drain-source on-state resistance Input capacitance Output capacitance
I D=100A, VGS=0V V V
GS=5V, VDS=0V DS
30 GS
300 220 1.1 3.0 33 35 6.8 7.3 12 14 80 100
0.5 50 1.2 -
V A A V mS pF pF
=30V ,VGS=0V
DS= V
I D=250A, V V
DS
0.6 Tr1 Tr2 Tr1 Tr2 Tr1 Tr2 Tr1 Tr2 Tr1 Tr2 Tr1 Tr2 -
| Yfs |
RDS(ON) Ciss Coss tON tOFF
=10V, I D=0.1A
GS
I D=100mA, V V V
DS
=4.0V
=10V, V =10V, V
GS
=0V,f=1MHz =0V,f=1MHz
DS
GS
Switching time
V V
=5V , I D=10mA =05V GS
DD
ns
Switching time test condition ( Tr.1 )
test circuit
5V IN
OUT
5V
90%
RL 0 10s VDD=5V D.U.1% Common source Ta=25 50 VDD
input waveform
0V VDD
10%
10%
output waveform
VDS(ON
ton
90%
tr toff tf
Switching time test condition ( Tr.2 )
test circuit
0 IN
OUT
0V
RL -5V 10s VDD=-5V D.U.1% Common source Ta=25 50 VDD
input waveform
-5V VDS(ON
10%
90%
output waveform
VDD
ton
90%
10%
tr toff tf
ISAHAYA ELECTRONICS CORPORATION
TYPICAL CHARACTERISTICS ( Tr.1 )
Ta=25 100
1.6V 1.5V
ID -VDS 1
1.4V
Ta=25
ID -VDS(Low voltage region)
1.0V
80 Drain current ID (mA) Drain current ID (mA)
1.3V
0.8
0.95V
60
0.6
40
1.2V
0.4
0.9V
20
1.1V VGS=1.0V
0.2
0.85V VGS=0.8V
0 0 2 4 6 8 10 Drain-Source voltage VDS (V)
0 0 0.1 0.2 0.3 Drain-Source voltage VDS (V)
0.4
0.5
IDR -VDS 100 Drain reverse current IDR (mA) Ta=25 VGS=0V Drain current ID (mA) 1000 Ta=25 VDS=10V
ID -VGS
100
10
10
1 -0 -0.5 -1 -1.5 -2 Drain-Source voltage VDS (V)
1 0 1 2 3 4 5 Gate-Source voltage VGS (V)
|Yfs| - ID 1000 Forward transfer admittance |Yfs| (mS) Ta=25 VDS=10V Drain-Source ON voltage VDS(ON) (mV) 1000 Ta=25 VGS=4V
VDS(ON) -ID
100
100
10
10
1 1 10 100 1000 Drain current ID (mA)
1 1 10 Drain currentID (mA) 100
t - ID 10000 Ta=25 toff 1000 Switching time t (ns) t Capacitance C (pF) 100
C - VDS
Ciss
100
10
Coss
10
ton tr
Ta=25 VGS=0V 1 1 10 100 0.1 1 10 Drain-Source voltage VDS (V) 100
1 0.1 Drain current ID (mA)
ISAHAYA ELECTRONICS CORPORATION
TYPICAL CHARACTERISTICS ( Tr.2 )
Ta=25 -100 -1.9V Drain current ID (mA) -80 -1.8V Drain current ID (mA) -1.7V -1.6V -1.5V -1.4V -20 VGS=-1.3V -0.8 ID -VDS -1 -1.0V -0.95V -0.9V -0.85V Ta=25 ID -VDS(Low voltage region)
-60 -40
-0.6 VGS=-0.8V -0.4
-0.2
-0 -0 -2 -4 -6 -8 -10 Drain-Source voltage VDS (V)
-0 -0 -0.1 -0.2 -0.3 -0.4 -0.5 Drain-Source voltage VDS (V)
IDR -VDS -100 Drain reverse current IDR (mA) Ta=25 VGS=0V
ID -VGS
-1000
Ta=25 VDS=-10V
Drain current ID (mA)
0 0.5 1 1.5 2
-100
-10
-10
-1 Drain-Source voltage VDS (V)
-1 -0 -1 -2 -3 -4 Gate-Source voltage VGS (V) -5
|Yfs| - ID 1000 Ta=25 VDS=-10V Forward transfer admittance |Yfs| (mS) Drain-Source ON voltage VDS(ON) (mV) -1000 Ta=25 VGS=-4V
VDS(ON) -ID
100
-100
10
-10
1 -1 -10 -100 -1000 Drain current ID (mA)
-1 -1 -10 Drain currentID (mA) C - VDS 100 Ciss -100
t - ID 10000 toff 1000 tf Capacitance C (pF) Ta=25
Switching time t (ns)
100 ton 10 tr 1 -0.1
10 Coss
Ta=25 VGS=0V 1 -0.1 -1 -10 -100
-1 -10 Drain current ID (mA)
-100
Drain-Source voltage VDS (V)
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
Keep safety first in your circuit designs! *ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. Notes regarding these materials *These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the customer's application; they don't convey any license under any intellectual property rights, or any other rights, belonging ISAHAYA or third party. *ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials. *All information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed herein. *ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. *The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. *If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to t e export control laws and regulations of Japan and/or the country of destination is h prohibited. *Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these materials or the products contained therein.
Apr.2007

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